▎ 摘　　要

The possibilities of terahertz frequency generation by using graphene nanoribbon (GNR) based avalanche transit time (ATT) sources are investigated in this paper. The most promising candidate of ATT device family, i.e., the impact avalanche transit time (IMPATT) diode is chosen for the present study. Parallel connected GNR based IMPATT structures with inherent power combining capability are proposed and simulated by using self-consistent quantum drift-diffusion model based in-house simulation codes in order to study the static, high frequency and noise performance of those at different millimeter-wave and terahertz frequency bands. The detailed study reveals that the in-build power combined GNR IMPATT sources are capable of performing more efficiently than the IMPATT sources based on some other popular semiconductor materials as well as some state-of-the-art terahertz radiators within the terahertz frequency band from 1 to 10 THz.