• 文献标题:   Growth of Few-Layer Graphene on a Thin Cobalt Film on a Si/SiO2 Substrate
  • 文献类型:   Article
  • 作  者:   KIM E, AN H, JANG H, CHO WJ, LEE N, LEE WG, JUNG J
  • 作者关键词:  
  • 出版物名称:   CHEMICAL VAPOR DEPOSITION
  • ISSN:   0948-1907 EI 1521-3862
  • 通讯作者地址:   Sejong Univ
  • 被引频次:   28
  • DOI:   10.1002/cvde.201004296
  • 出版年:   2011

▎ 摘  要

Few-layered sheets of graphene were synthesized on polycrystalline thin Co and Ni films by low pressure chemical vapor deposition. On average, thinner layers of graphene were synthesized on Co than on the conventional Ni at the same process conditions, but slightly higher defects were detected on Co-grown graphene layers than on Ni-grown ones. Possible explanations for this are suggested.