▎ 摘　　要

Angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low-pressure chemical vapour deposition. A short vacuum anneal to 200 degrees C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 degrees C produces n-type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim