• 文献标题:   Epitaxial growth and structural property of graphene on Pt(111)
  • 文献类型:   Article
  • 作  者:   GAO M, PAN Y, HUANG L, HU H, ZHANG LZ, GUO HM, DU SX, GAO HJ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   153
  • DOI:   10.1063/1.3543624
  • 出版年:   2011

▎ 摘  要

We report on epitaxial growth of graphene on Pt(111) surface. It was found out that the proportion of different rotational domains varies with growth temperature and the graphene quality can be improved by adjusting both the growth temperature and ethylene exposure. Rippled and unrippled domains of high quality graphene are observed. The adhesive energy and electronic structure of two models, representing rippled and unrippled graphene, are obtained with density functional theory calculation, which shows that the interaction between graphene and Pt(111) surface is very weak and the electronic structure is nearly the same as that of a free standing graphene. (c) 2011 American Institute of Physics. [doi:10.1063/1.3543624]