▎ 摘　　要

A p-n junction was developed in a graphene transistor by a simple photolithography process used in typical semiconductor processes. The p- and n-type regions were formed by coating photoresist on part of the graphene channel and immersion of the uncovered graphene region in alkali developer, respectively. A 3-fold enhancement of the photocurrent was observed at the maximum field effect mobility. It is therefore important to maximize the field effect mobility by doping to maximize the photocurrent. The results obtained here are an important step toward the production of high-sensitivity graphene-based phototransistors compatible with conventional industrial procedures. (C) 2016 The Japan Society of Applied Physics