▎ 摘　　要

Graphene is considered as a promising candidate material to replace silicon for the next-generation nanoelectronics because of its superb carrier mobility. To evaluate its thermal dissipation capability as electronic materials, the thermal transport in monolayer graphene was extensively explored over the past decade. However, the supported chemical vapor deposition (CVD) grown monolayer graphene with submicron structures were seldom studied, which is important for practical nanoelectronics. Here we investigate the thermal transport properties in a series of CVD graphene nanomeshes patterned by a hard-template-assisted etching method. The experimental and numerical results uncovered the phonon backscattering at hole boundary (<100 nm neck width) and its substantial contribution to the thermal conductivity reduction.