• 文献标题:   Molecular dynamics simulation of graphene growth on Ni(100) facet by chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   RASULI R, MOSTAFAVI K, DAVOODI J
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Univ Zanjan
  • 被引频次:   14
  • DOI:   10.1063/1.4862164
  • 出版年:   2014

▎ 摘  要

We present a molecular dynamics simulation of chemical vapor deposition of graphene. Single layer graphene growth on a Ni (100) facet was studied at different substrate temperatures, C flow rates, and C flow energies. Results show that a single layer graphene film grows through a combined deposition mechanism on a Ni substrate, rather than by surface segregation. These simulations suggest that high quality graphene deposition is theoretically possible on Ni (100) facet under high flux energy. (C) 2014 AIP Publishing LLC.