▎ 摘　　要

In this letter, a high-performance graphene-based electrostatic field sensor is demonstrated. Combining the ultrahigh mobility of graphene and the long lifetime of carriers in SiO2/lightly doped Si substrate, our device achieves a fast response of similar to 2 mu s and detection limit of electrostatic potential as low as similar to 5 V, which is improved by an order of magnitude as compared with commercial products. The proposed device structure opens a promising pathway to high-sensitive electrostatic detection, and also greatly facilitates the development of novel sensors.