• 文献标题:   Growth and Structural Properties of Pb Islands on Epitaxial Graphene on Ru(0001)
  • 文献类型:   Article
  • 作  者:   LIU LW, XIAO WD, YANG K, ZHANG LZ, JIANG YH, FEI XM, DU SX, GAO HJ
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447 EI 1932-7455
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   7
  • DOI:   10.1021/jp404190c
  • 出版年:   2013

▎ 摘  要

Structural properties of Pb islands grown on graphene/Ru(0001) at various deposition temperatures (T-D) and annealing temperatures (T-A) are investigated by a low-temperature scanning tunneling microscope. Single-layer Pb islands with a 2 X 2 reconstruction are only formed at T-D of 80 K and disappear with post-annealing to room temperature (RT). It is revealed that a morphological transition of the Pb islands takes place, from irregular shapes to a hexagonal equilibrium shape, with increasing T-D or T-A to RT. Moreover, Pb islands grown at T-D of RT are larger than those grown at a T-D of 80 K and annealed to RT. All Pb islands with a T-A or T-D of RT are (111)-faceted with thicknesses of even-numbered atomic layers and exhibit a weak interaction between Pb and graphene.