▎ 摘　　要

InGaN-based vertical structure light emitting diodes (VLEDs) with multi-layer graphene transparent electrodes with higher optical output have been fabricated and tested. High temperature annealing introduced inter-diffusion of metal atoms and Ga atoms and generated the partially sandwiched graphene structure, which contributed to the performance improvement of VLEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742892]