• 文献标题:   Electronic properties of disordered bilayer graphene
  • 文献类型:   Article
  • 作  者:   OUYANG T, CHEN YP, XIE YE, YANG KK, ZHONG JX
  • 作者关键词:   bilayer graphene, electronic propertie, metalinsulator transition
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098
  • 通讯作者地址:   Xiangtan Univ
  • 被引频次:   10
  • DOI:   10.1016/j.ssc.2010.09.049
  • 出版年:   2010

▎ 摘  要

Based on the Anderson tight-binding model, the electronic properties of disordered bilayer graphene are investigated. Our numerical results show that electrons in bilayer graphene with monolayer disorder (MDBG) exhibit a peculiar behavior that is quite different from that in bilayer graphene with bilayer disorder (BDBG). With the increase of disorder, BDBG becomes an insulating disordered two-dimensional (20) electron system. In the case of monolayer disorder, however, the energy spectrum has strongly localized tail states and a stable extended central state separated by persistent mobility edges which are independent of the disorder strength. This indicates that a metal insulator transition occurs in the monolayer disorder structure. This is similar to the case in an order disorder separated quantum film. The results could offer useful information for understanding and manipulating the electronic properties of disordered bilayer graphene. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.