▎ 摘　　要

In this article, non-fullerene, cost effective, and highly soluble zinc tetra-tert-butyl phthalocyanine-reduced graphene oxide (ZnTTBPc-RGO) heterojunction have been used as an active layer in organic photovoltaic devices. The RGO content in the active material is varied from 0.25-0.5 volume fractions which are above the percolation threshold of 0.167 volume fraction of RGO. Temperature dependent current density-voltage characteristics show a transition from Ohmic conduction to space charge limited current (SCLC) conduction at higher applied bias voltages (>= 1 V). This enables us to extract charge carrier mobility values of the heterojunction at different temperatures using a trap-free SCLC model. A donor-acceptor solution processable photovoltaic device with 0.33 vol.% RGO content of active layer show the highest power conversion efficiency of 1.02%, highest recombination resistance of 48.65 k Omega, and maximum carrier mobility of 4.32 x 10(-4) cm(2) V-1 s(-1) among the three devices studied. 80 h exposure to ambient conditions see a similar to 40% decay of power conversion efficiency. Quantitative analysis on the density of trap states indicates that the best power conversion efficiency and the highest charge carrier mobility correlate well with a minimum of the trap density and a maximum of recombination resistance for these devices.