▎ 摘　　要

Motivated by the possibility of a strain tuning effect on electronic properties of graphene, the semimetal-Mott insulator transition process on the uniaxial honeycomb lattice is numerically studied using the determinant quantum Monte Carlo method. As the simulations are based on the half-filled-repulsive Hubbard model, the system is sign-problem free. Herein, the temperature-dependent DC conductivity to characterize electronic transport properties is used. The data suggest that metal is suppressed in the presence of strain. More interestingly, within the finite-size-scaling study, a novel antiferromagnetic phase arises at around U similar to U c . Therefore, a phase diagram generated by the competition between interactions, and strain is established, which may help to expand the application of strain effect on graphene.