• 文献标题:   Electronic and magnetic properties of silicon adsorption on graphene
  • 文献类型:   Article
  • 作  者:   HU CH, ZHENG Y, ZHANG Y, WU SQ, WEN YH, ZHU ZZ
  • 作者关键词:   surfaces interface, point defect, electronic state
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098
  • 通讯作者地址:   Xiamen Univ
  • 被引频次:   12
  • DOI:   10.1016/j.ssc.2011.05.027
  • 出版年:   2011

▎ 摘  要

Graphene has proved to be extremely sensitive to its surrounding environment, such as the supporting substrate and guest adatoms. In this work, the structural stabilities, and electronic and magnetic properties of graphene with low-coverage adsorption of Si atoms and dimers are studied using a first-principles method. Our results show that graphene with Si adatoms is metallic and magnetic with a tiny structural change in the graphene, while graphene with Si addimers is semi-metallic and nonmagnetic with a visible deformation of the graphene. The spin-polarized density of states is calculated in order to identify the electronic origin of the magnetic and nonmagnetic states. The present results suggest that the electronic and magnetic behaviors of graphene can be tuned simply via Si adsorptions. (C) 2011 Elsevier Ltd. All rights reserved.