▎ 摘　　要

Strain in the lattice has a profound effect on the electrical and optoelectronic properties of the material. Here, we demonstrate the extent effect of micro-strain applied to graphene, induced by silver nanowires (AgNWs), on its lattice and electronic properties. In the typical process, we found that the micro-strain effect has critically expanded the lattice carbon-carbon bond length as confirmed by a dramatic red-shift in the Raman main character of graphene. For example, the G and 2D band vibration mode of graphene shifts as high as 11.31 and 13.47 cm(-1), respectively, that is from 1593.67 to 2687.46 cm(-1) for unstrained graphene to 1583.36 and 2673.99 cm(-1) for graphene under micro-strain induced by AgNWs with density 5 wire/100 mu m(2). Raman spectra also indicated that the shifting value is dependable on the nanowire's density. XPS analysis results also reveals that the changes in bond length directly cause a strong modification in its electronic state, altering its overall electronic properties. Enhanced electrical and optoelectronic properties is expected from this micro-strained graphene system.