▎ 摘　　要

Hydrogen and oxygen are the most commonly used gasses in the growth of chemical vapor deposition (CVD) graphene, which are very important for the growth of CVD graphene. In this work, a series of graphene etching and multistep growth experiments are designed to clarify the etching effect of hydrogen and oxygen to graphene on Cu. The etching effect to graphene in Ar (with oxygen impurities), mixture of H-2 and Ar, and growth at-mosphere with different hydrogen concentration are studied in detail. The role of hydrogen and oxygen in graphene growth is further discussed finally.