• 文献标题:   Defect engineering of graphene for effective hydrogen storage
  • 文献类型:   Article
  • 作  者:   YADAV S, ZHU ZH, SINGH CV
  • 作者关键词:   hydrogen storage, graphene, topological defect, defectengineering, physisorption
  • 出版物名称:   INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
  • ISSN:   0360-3199 EI 1879-3487
  • 通讯作者地址:   Univ Toronto
  • 被引频次:   44
  • DOI:   10.1016/j.ijhydene.2014.01.051
  • 出版年:   2014

▎ 摘  要

Although several modifications to graphene have been proposed to improve its hydrogen binding to practical levels, current theoretical studies largely neglect the role of topological defects. In this paper we analyze the effect of these defects and their possible use in a hydrogen storage system. Hydrogen physisorption on five types of point defects (Stone-Wales, single vacancy and three types of double vacancy) was investigated using density functional theory with the PBE-GGA functional. Point defects were also repeated with the vdW-DF2 functional to better represent long range van der Waals interactions. Although none of the defects were found to be detrimental to hydrogen anchoring, only the single vacancy showed promising hydrogen binding in the ideal range. Model systems combining different defects were also explored, including a defect-anchored metal system, a bilayer graphene system and a grain-boundary system. Finally, two high defect density structures constructed using vacancies and combined Stone-Wales defects and vacancies yielded gravimetric densities of 5.81% and 7.02%, respectively, with the vdW functional. This study suggests that graphene can be defect-engineered to develop effective hydrogen storage media. Copyright (c) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.