▎ 摘　　要

We propose an approach that allows us to take into account the location of atomic defects in the graphene structure and describe the effect of electron scattering on certain configurations of foreign atoms in a graphene matrix on density of electronic states (DOS) and the electron transport characteristics in 2D graphene. The local disorder is shown to play a decisive role in formation of the low-temperature behavior of the DOS and electron transport characteristics in the disordered 2D graphene.