▎ 摘　　要

We resolved some controversial issues on the Bloch-Griineisen (BG) temperature in doped graphene via analytical and numerical calculations based on full inelastic electron-acoustic-phonon (EAP) scattering rate and various approximation schemes. Analytic results for BG temperature obtained by semi-inelastic (SI) approximation (which gives scattering rates in excellent agreement with the full inelastic scattering rates) are compared with those obtained by quasielastic (QE) approximation and the commonly adopted value of Theta(LA)(F) = 2h nu(LA)k(F)/k(B). It is found that the commonly adopted BG temperature in graphene (Theta(LA)(F)) is about 5 times larger than the value obtained by the QE approximation and about 2.5 times larger than that by the SI approximation, when using the crossing-point temperature where low-temperature and high-temperature limits of the resistivity (rho) meet. The corrected analytic relation based on SI approximation agrees extremely well with the transition temperatures determined by fitting the low- and high-T behavior of available experimental data of graphene's resistivity. Using the analytic expression of Theta(BG) we can prove that the normalized resistivity defined as R = rho(T)/rho(Theta(BG)) plotted as a function of (T/Theta(BG)) is independent of the carrier density. We also introduced a way to determine the BG temperature including the full inelastic EAP scattering rate when the deviation of electron energy from the chemical potential is taken into account by finding the maximum of partial derivative rho/partial derivative T.