▎ 摘　　要

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 mu s for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications. Published by AIP Publishing.