• 文献标题:   Quantum magneto-oscillations in the ac conductivity of disordered graphene
  • 文献类型:   Article
  • 作  者:   BRISKOT U, DMITRIEV IA, MIRLIN AD
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Karlsruhe Inst Technol
  • 被引频次:   11
  • DOI:   10.1103/PhysRevB.87.195432
  • 出版年:   2013

▎ 摘  要

The dynamic conductivity sigma(omega) of graphene in the presence of diagonal white noise disorder and quantizing magnetic field B is calculated. We obtain analytic expressions for sigma(omega) in various parametric regimes ranging from the quasiclassical Drude limit corresponding to strongly overlapping Landau levels (LLs) to the extreme quantum limit where the conductivity is determined by the optical selection rules of the clean graphene. The nonequidistant LL spectrum of graphene renders its transport characteristics quantitatively different from conventional 2D electron systems with parabolic spectrum. Since the magneto-oscillations in the semiclassical density of states are anharmonic and are described by a quasicontinuum of cyclotron frequencies, both the ac Shubnikov-de Haas oscillations and the quantum corrections to sigma(omega) that survive to higher temperatures manifest a slow beating on top of fast oscillations with the local energy-dependent cyclotron frequency. Both types of quantum oscillations possess nodes whose index scales as omega(2). In the quantum regime of separated LLs, we study both the cyclotron resonance transitions, which have a rich spectrum due to the nonequidistant spectrum of LLs, and disorder-induced transitions, which violate the clean selection rules of graphene. We identify the strongest disorder-induced transitions in recent magnetotransmission experiments. We also compare the temperature and chemical-potential dependence of sigma(omega) in various frequency ranges from the dc limit allowing intra-LL transition only to the universal high-frequency limit where the Landau quantization provides a small B-dependent correction to the universal value of the interband conductivity sigma = e(2)/4 (h) over bar of the clean graphene.