• 文献标题:   STM-driven transition from rippled to buckled graphene in a spin-membrane model
  • 文献类型:   Article
  • 作  者:   RUIZGARCIA M, BONILLA LL, PRADOS A
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Carlos III Madrid
  • 被引频次:   3
  • DOI:   10.1103/PhysRevB.94.205404
  • 出版年:   2016

▎ 摘  要

We consider a simple spin-membrane model for rippling in graphene. The model exhibits transitions from a flat but rippled membrane to a buckled one. At high temperature the transition is second order, but it is first order at low temperature for appropriate strength of the spin-spin coupling. Driving the system across the first-order phase transition in nonequilibrium conditions that mimic interaction of the graphene membrane with a scanning tunneling microscopy (STM) tip explains recent experiments. In particular, we observe a reversible behavior for small values of the STM current and an irreversible transition from a flat rippled membrane to a rigid buckled membrane when the current surpasses a critical value. This work makes it possible to test the mechanical properties of graphene under different temperature and electrostatic conditions.