▎ 摘　　要

Resistive switching memory, flexible electronics equipment, and graphene-oxide-based devices have attracted much attention recently because of their possible application in next-generation electronic devices. In this study, a graphene-oxide-based flexible resistive switching memory is proposed. The flexibility and nonvolatility of the flexible device are demonstrated. A possible resistive switching filamentary model of the flexible device is also proposed. The experimental results indicate that the proposed graphene-oxide-based device is promising for use in next-generation nonvolatile memory and flexible electronics equipment. (C) 2014 The Japan Society of Applied Physics