▎ 摘　　要

The superior optical and electronic characteristics of quasi-two-dimensional beta-Ga2O3 make it suitable for solar-blind (200-280 nm) photodetectors (PDs). The metal-semiconductor-metal (MSM) PDs commonly suffer from low photoresponsivity, slow response speed, and a narrow detection wavelength range despite their simple fabrication process. Herein, we report a high-performance MSM PD by integrating exfoliated beta-Ga2O3 flakes with zero-dimensional graphene quantum dots (GQDs), which exhibits the advantages of enhancing the photoresponsivity, shortening the photoresponse time, and stimulating a broad range of photon detection. The hybrid GQDs/beta-Ga2O3 heterostructure PD is sensitive to deep-ultraviolet (DUV) light (250 nm) with an ultrahigh responsivity (R of similar to 2.4 x 10(5) A/W), a large detectivity (D* of similar to 4.3 X 10(13) Jones), an excellent external quantum efficiency (EQE of similar to 1.2 x 10(8)%), and a fast photoresponse (150 ms), which is superior to the bare beta-Ga2O3 PD. These improvements result from effective charge transfer due to the introduction of GQDs, which enhance the light absorption and the generation of electron-hole pairs. In addition, the hybrid GQDs/beta-Ga2O3 PD also exhibits better photoelectric performance than the bare beta-Ga2O3 PD at a 1000 nm wavelength. As a conclusion, the hybrid GQDs/beta-Ga2O3 DUV photodetector shows potential applications in commercial optoelectronic products and provides an alternative solution for the design and preparation of high-performance photodetectors.