▎ 摘　　要

We analyse a model describing hysteretic behaviour of the reflectivity R for the system 'graphene Pb(ZrxTi1-x)O-3 (PZT) ferroelectric substrate-gate' with a gate voltage variation, which takes into account trapping of electrons into the graphene-PZT. interface states. We demonstrate that the hysteresis in the R parameter can be observed experimentally for the telecommunication-range radiation (the wavelength lambda = 1.55 mu m) at low gate voltages and, moreover, the phenomenon can be used while creating fast bistable systems for the novel nonvolatile memory devices with on-chip optical interconnection.