▎ 摘　　要

In this paper, the ambient doping effect on negative/positive bias temperature instability (NBTI/PBTI) of single layer graphene field effect transistors (FETs) is investigated. In ambient air, the Delta V-th of NBTI is comparable with that of PBTI under the same stress voltage at room temperature. The Delta V-th of NBTI appears insensitive to temperature, while the Delta V-th of PBTI increases significantly with rising temperatures, due to the thermally activated charging of ambient doped defects at the graphene/SiO2 interface. This effect also results in an abnormal recovery of NBTI. In an ambient vacuum, the Delta V-th is much less than that in ambient air. In addition, the Delta V-th of both NBTI and PBTI decreases substantially for higher temperatures in the vacuum. The adsorbed molecules are mainly responsible for the Delta V-th under BTI stress and the back-gated graphene FETs in the air.