▎ 摘　　要

Optical excitation and subsequent decay of graphene plasmons can produce a significant increase in charge-carrier temperature. An efficient method to convert this temperature elevation into electrical signals can enable important mid-infrared applications. However, the modest thermoelectric coefficient and weak temperature dependence of carrier transport in graphene hinder this goal. Here, we demonstrate mid-infrared graphene detectors consisting of arrays of plasmonic resonators interconnected by quasi-one-dimensional nanoribbons. Localized barriers associated with disorder in the nanoribbons produce a dramatic temperature dependence of carrier transport, thus enabling the electrical detection of plasmon decay in the nearby graphene resonators. Our device has a subwavelength footprint of 5 x 5 mu m(2) and operates at 12.2 mu m with an external responsivity of 16 mA W-1 and a low noise-equivalent power of 1.3 nW Hz(-1/2) at room temperature. It is fabricated using large-scale graphene and possesses a simple two-terminal geometry, representing an essential step towards the realization of an on-chip graphene mid-infrared detector array.