▎ 摘　　要

We demonstrate the formation of a p-n junction in 2-D graphene through complementary doping. A shift of the Dirac point is observed with increased electrical stressing voltage, indicating the modification of electrostatic charge distribution in the material system. Both graphene and graphene/metal contact resistances show significant decrease after electrical stressing. Carrier mobility is affected due to the charge modification. By combining hydrogen silsesquioxane coating and electrical stressing, local doping in graphene is controlled, and a p-n junction can be formed.