▎ 摘　　要

We demonstrate solution-processed graphene/fluoropolymer field-effect transistors (FETs) fabricated below 150 degrees C, which exhibit field-effect mobility levels as high as 2.3 cm(2)/V-s. By reducing the charge transfer in graphene with impurities via a carbon-fluorine dipole interaction with fluoropolymer, key device metrics such as field-effect mobility, on-off current ratio, impurity concentration and electron and hole transport symmetry in the solution-processed graphene/fluoropolymer FETs were improved. We also investigate the charge transport in high-performance solution-processed graphene/fluoropolymer FETs by exploring the origin of the improved electrical characteristics. We claim from a practical standpoint for large-area electronics that, the approach proposed here represents a significant advance as well as an effective technique for achieving favorable improvement in device performance levels of solution-processed disordered graphene systems in which the effect of charged impurities can be suppressed.