▎ 摘　　要

This paper aims to develop an innovative ternary slurry named as G-slurry to be fabricated by a chemically grafted method to strongly bond PU/GO (polyurethane microspheres/ graphene oxide nanoplatelets) and with addition of SiO2 abrasives. This G-slurry is demonstrated for efficient CMP of Si face of 4H-SiC wafers. FTIR spectra is adopted to prove having strong bonding between PU and GO by chemical modification of PU microspheres. With this G-slurry, a semi-fixed abrasive polishing (SFAP) process has been investigated to effectively polish SiC wafers, and its performance is compared with that of a counterpart 1 slurry which is consisting of PU and SiO2 served as a benchmark in this work. In preparation of G-slurry, three important processing parameters include weight fraction of graphene oxide (GO), sonication time, and pH value. Effects on material removal rate (MRR), surface roughness, and surface roughness improvement rate (SRIR) of polished SiC wafers are investigated. SEM, Raman, and XPS (X-ray photoelectron spectroscopy) spectra are adopted to analyze the specific CMP mechanism of polished SiC wafers by G-slurry. Based on the mechanism, three key factors of G-slurry have been verified with its better performance on CMP of SiC wafers compared with two counterpart slurries and shown to be potentially applied for SiC wafer processing.