▎ 摘　　要

The plasma-enhanced chemical vapor deposition process enables the growth of graphene at a moderate tem-perature, but it is vertical graphene (VG) with a large number of defects. In this letter, we report a successful method to obtain planar graphene by morphing of Cu nanostructure during a modified Ar/CH4 plasma process at 600 degrees C. The insertion of meshed metal shields within the plasma region reduces the magnitude of ions bombardment on the substrate. In this circumstance, the evaporated Cu with a thickness of 200 nm on a black Si template is permitted to diffuse and form a planar film. The reduced plasma etching allows the growth of VG leaves and they are converted into planar multilayer graphene during the Cu morphing process. The crystal defect on planar graphene is minimum, where the values of Raman ID/IG and ID'/IG are 1.91 +/- 0.06 and 0.20 +/- 0.02, respectively.