▎ 摘　　要

Solar-driven hydrogen evolution over ZnO-ZnS heterostructures is considered as a promising strategy for sustainable-energy issues. However, the industrialization of this strategy is still constrained by sup -pressed carrier migration, rapid charge recombination, and the inevitable utilization of noble-metal par-ticles. Herein, we envision a novel strategy of successfully introducing In2O3 into the ZnO-ZnS heterostructure. Benefiting from the optimized internal electric field and the charge carrier migration mode based on the direct Z-scheme, the interfacial elaborating In2O3-decorated ZnO/reduced graphene oxide (rGO)/ZnS heterostructure manifests smooth charge migration, suppressed electron-hole pair recombination, and increased surface active sites. More importantly, the in situ introduction of In2O3 optimizes the construction of the internal electric field, favoring directional light-triggered carrier migra-tion. As a result, the light-induced electrons generated from the heterostructure can be efficiently employed for the hydrogen evolution reaction. Hence, this work would shed light on the in situ fabrica-tion of noble-metal-free photocatalysts for solar-driven water splitting. (c) 2022 Elsevier Inc. All rights reserved.