▎ 摘　　要

In this study, we synthesized a new composite material, graphene oxide (GO) nanosheets covered with polypyrrole (PPy) and polyvinylferrocene (PVfc) nanoclusters. This material was used in a nonvolatile resistive-switching memory device. The structures of the synthesized nanocomposite were analyzed by field emission scanning electron microscope, infrared spectroscopy and X-ray photoelectric spectroscopy. The results showed that polymers were in-situ grown on GO nanosheets continuously. It was found that N+ polaron was formed due to the protonic acid doping of PPy component, and ferrocenium ions were richly generated from the oxidation of PVfc component. A reversible bistable nonvolatile resistive-switching memory device with good stability and high ON/OFF current ratio was fabricated using the synthesized composite as active layer. The charge transport mechanism of different resistance states was studied using model-fitting methods.