▎ 摘　　要

We demonstrate a method to fabricate flexible field effect transistors based on mask-free inkjet printed silver micro-electrodes and wet-transfer of chemical vapor deposition grown graphene. The process is simple, low-cost and repeatable. The transistor shows a field-effect hole mobility of 33 cm(2)/Vs and on/off ratio of 2.1 with high drain current of 54 mA, which is the highest reported in air at room temperature.