• 文献标题:   Ultrabroadband Compact Graphene-Silicon TM-Pass Polarizer
  • 文献类型:   Article
  • 作  者:   HU X, WANG J
  • 作者关键词:   graphene, silicon photonic, silicon waveguide, slot waveguide, polarizer
  • 出版物名称:   IEEE PHOTONICS JOURNAL
  • ISSN:   1943-0655 EI 1943-0647
  • 通讯作者地址:   Huazhong Univ Sci Technol
  • 被引频次:   32
  • DOI:   10.1109/JPHOT.2017.2672901
  • 出版年:   2017

▎ 摘  要

Graphene is treated as an anisotropic material because it is one atom thick and its pi electrons cause electric conduction in its plane. Based on the polarization-dependent absorption, we design compact broadband transverse-magnetic (TM)-pass polarizer by exploiting a graphene-silicon horizontal slot waveguide structure on silicon-on-insulator (SOI) platforms. The interaction between light and graphene is greatly enhanced by placing the double-layer graphene sheets adjacent to the slot waveguide. The selection of the geometric parameters (e.g., waveguide width, silicon, and Si3N4 thicknesses) is discussed. We study the mode properties, extinction ratio (ER), bandwidth, and insertion loss. The graphene-silicon slot waveguide based polarizer offers the performance of high extinction ratio, low insertion loss, broad bandwidth, small footprints, and compatibility with an SOI platform. By employing a 150 mu m long graphene-silicon horizontal slot waveguide, the ER is higher than 40 dB, and the insertion loss is less than 3 dB over the 1450-1650 nm wavelength range. We also analyze the impacts of practical fabrication imperfections on the operation performance, i.e., fabrication error tolerance, and give the possible fabrication process of graphene-silicon horizontal slot waveguide based polarizer.