• 文献标题:   Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics
  • 文献类型:   Article
  • 作  者:   HLAWACEK G, KHOKHAR FS, VAN GASTEL R, POELSEMA B, TEICHERT C
  • 作者关键词:   graphene, organic semiconductor, layerbylayer growth, lowenergy electron microscopy, lowenergy electron diffraction
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Twente
  • 被引频次:   45
  • DOI:   10.1021/nl103739n
  • 出版年:   2011

▎ 摘  要

High quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron microscopy and micro low energy electron diffraction reveal the morphological and structural evolution of the thin film. The layer-by-layer growth of 6P on graphene proceeds by subsequent adding of {1 (11) over bar} layers.