▎ 摘　　要

The electronic structure, temperature-dependent thermal conductivity k(T) and heat capacity C-V(T) of bilayer graphene nanoribbons (G/G), boron nitride nanoribbons (BN/BN) and graphene/boron nitride nanoribbons (G/ BN) with AA and AB stacking are investigated using the tight binding model and Green's function method. The results show that the bilayer G/G with AA stacking is metallic independent of the bias while other structures with AA and AB stacking are semiconductor in absence of bias and their band gap reduce in the presence of bias. The k(T) for all structures increases with temperature to its maximum value and then decreases by further temperature increasing. The k(T) of bilayer BN/BN is smaller than that of bilayer G/G and G/BN. The C-V(T) of all structures increases up to a maximum value at T = T-M (Schottky anomaly) and the corresponding T-M value depends on the nanoribbons types and stacking as T-M(G/G) < T-M(G/BN) < T-M(BN/BN). The C-V(T) of bilayer G/ G is larger than G/BN and BN/BN.