▎ 摘　　要

A mechanism that enables electrically controlled magnetic domain wall transfer in a ferromagnetic insulator (FMI) is investigated theoretically by utilizing graphene as a crucial mediating material. The concept is grounded on the variability of the exchange interaction energy between a ferromagnetic insulator and a proximate graphene layer with an inhomogeneous carrier density. A memory device prototype is proposed based on the effect that does not require an active current for its intrinsic function. Our analysis illustrates the highly efficient device operation, with an estimated switching energy of 10(-16) J for one binary bit of nonvolatile information. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732794]