▎ 摘　　要

A simple and effective strategy is introduced for the direct growth of SiC nanowires, carbon nanotubes (CNTs), and graphene on target substrates via a solid-state process based on the use of a solid amorphous carbon source. The desired products were synthesized in large quantities via the thermal treatment of laminated sandwich film precursors at 900 A degrees C under a protective Ar atmosphere. The growth mechanisms and evolution models of the SiC nanowires, CNTs, and graphene were studied in detail and were proposed to be a combination of a dissolution-precipitation process and a confined reaction from a laminated sandwich film precursor. The combination of this fabrication process (which also enables the simultaneous patterning of the proposed nanostructures) with the inherent properties of SiC nanowires, CNTs, and graphene therefore represents significant progress in the functional patterning of nanomaterials for use in a range of potential applications.