▎ 摘　　要

Electronic analogy of Goos-Hanchen shift has been well established and investigated in various graphene-based nanostructures, including p-n interface, single and double barriers. In this paper, we have studied the giant negative and positive lateral shifts of the transmitted electron beam through graphene superlattices. It is found that the lateral shifts, depending on the location of new Dirac point, can be negative as well as positive near the band edges of zero-(k) over bar (non-Bragg) gap. We have also achieved the enhanced opposite shifts in the graphene superlattice with defect layer, since such structure possesses the defect mode inside the zero-k gap. The modulations of negative and positive lateral shifts by incidence angles, width and potential height of defect layer may lead to potential applications in the graphene-based electron wave devices.