• 文献标题:   Coulomb drag and high-resistivity behavior in double-layer graphene
  • 文献类型:   Article
  • 作  者:   PERES NMR, DOS SANTOS JMBL, CASTRO NETO AH
  • 作者关键词:  
  • 出版物名称:   EPL
  • ISSN:   0295-5075 EI 1286-4854
  • 通讯作者地址:   Univ Minho
  • 被引频次:   40
  • DOI:   10.1209/0295-5075/95/18001
  • 出版年:   2011

▎ 摘  要

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates. Copyright (C) EPLA, 2011