• 文献标题:   Lateral homoepitaxial growth of graphene
  • 文献类型:   Article
  • 作  者:   WANG H, WANG GZ, BAO PF, SHAO ZB, ZHANG X, YANG SL, ZHU W, DENG BC
  • 作者关键词:  
  • 出版物名称:   CRYSTENGCOMM
  • ISSN:   1466-8033
  • 通讯作者地址:   Univ Sci Technol China
  • 被引频次:   8
  • DOI:   10.1039/c3ce42072h
  • 出版年:   2014

▎ 摘  要

In this paper, we present electron diffraction and high-resolution transmission electron microscopy (HRTEM) evidence that graphene can be laterally homoepitaxially grown from homo-seeds. We demonstrate that exfoliated thin graphite flakes and CVD-grown graphene grains can both serve as seed crystals. Raman spectra indicate that the epitaxial graphene is 1-2 layers thick, regardless of seed thickness. A two-step growth procedure is developed to epitaxially synthesize large graphene grains. Lateral homoepitaxial growth makes it a reality to duplicate the structure and increase the size of small high-quality graphene crystals.