▎ 摘　　要

Wafer-scale graphene on SiC with uniform structural and electrical features is needed to realize graphene-based radio frequency devices and integrated circuits. Here, a continuous bi/trilayer of graphene with uniform structural and electrical features was grown on 2 inch 6H-SiC (0001) by etching before and after graphene growth. Optical and atomic force microscopy images indicate the surface morphology of graphene is uniform over the 2 inch wafer. Raman and transmittance spectra confirmed that its layer number was also uniform. Contactless resistance measurements indicated the average graphene sheet resistance was 720 Omega/a- with a non-uniformity of 7.2%. Large area contactless mobility measurements gave a carrier mobility of about 450 cm(2)/(V s) with an electron concentration of about 1.5x10(13) cm(-2). To our knowledge, such homogeneous morphology and resistance on wafer scale are among the best results reported for wafer-scale graphene on SiC.