• 文献标题:   Molecular alignment on graphene surface determines transport properties of graphene/organic semiconductor transistors
  • 文献类型:   Article
  • 作  者:   TKACHUK V, PAVLICA E, BRATINA G
  • 作者关键词:   graphene, atomic force microscopy, charge transport, organic semiconductor, transistor
  • 出版物名称:   ORGANIC ELECTRONICS
  • ISSN:   1566-1199 EI 1878-5530
  • 通讯作者地址:   Univ Nova Gorica
  • 被引频次:   0
  • DOI:   10.1016/j.orgel.2020.105933
  • 出版年:   2020

▎ 摘  要

Graphene field-effect transistor structures were used to investigate the role of molecular alignment on charge transport properties of heterostructures comprising a single-layer graphene and variable thickness of N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN2) - an n-type organic semiconductor. Our atomic force microscopy data show that under selected growth conditions PDI8-CN2 grows in a layer-by-layer fashion up to a second monolayer. The first layer comprises flat-lying molecules, whereas the molecules in the second layer orient themselves in an upright orientation. Transconductance measurements show that the flatlying molecules have little effect on the position of the Fermi level in graphene. Upright oriented molecules in the second layer instead, have a strong effect as to neutralize native p-type doping of graphene and cause a shift of charge-neutrality level towards the Dirac point. We interpret such behavior in terms of different orientation of the surface dipole on layers with different molecular orientations. At the same time the overall mobility of the charge carriers reaches values exceeding 3000 cm(3)/Vs.