• 文献标题:   Graphene Frequency Multipliers
  • 文献类型:   Article
  • 作  者:   WANG H, NEZICH D, KONG J, PALACIOS T
  • 作者关键词:   frequency doubler, frequency multiplier, fullwave rectifier, graphene fieldeffect transistors gfets
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106
  • 通讯作者地址:   MIT
  • 被引频次:   234
  • DOI:   10.1109/LED.2009.2016443
  • 出版年:   2009

▎ 摘  要

In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultra-high frequencies.