• 文献标题:   Contact resistance in graphene channel transistors
  • 文献类型:   Review
  • 作  者:   SONG SM, CHO BJ
  • 作者关键词:   graphene, contact resistance, work function, charge transport
  • 出版物名称:   CARBON LETTERS
  • ISSN:   1976-4251 EI 2233-4998
  • 通讯作者地址:   Korea Adv Inst Sci Technol
  • 被引频次:   20
  • DOI:   10.5714/CL.2013.14.3.162
  • 出版年:   2013

▎ 摘  要

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.