▎ 摘　　要

Graphene oxide (GO) was chemically synthesized by improved Hummer's method. The synthesis was confirmed by Raman and FT-IR spectroscopy. The dielectric relaxation studies of graphene oxide (GO) in the frequency range of 100 Hz 1 MHz and in the temperature range of 77 475 K are reported here. At lower temperatures (<250 K), the measured ac conductivity shows linear variation with frequency. Whereas, at higher temperatures, it is almost independent of frequency as dc conductivity predominates in this region. In the dielectric measurement studies, it is observed that dielectric constant increases rapidly with temperature up to 300 K. Broad loss peaks are observed in the temperature region where the measured ac conductivity approaches dc conductivity. The behaviour of both high values of real as well as imaginary part of complex permittivity has been thoroughly investigated in the light of dielectric modulus formalism and is attributed to the interfacial polarization between insulating sp(3) region and conducting sp(2) domains. The material exhibits great potential towards giant dielectric constant applications.