▎ 摘　　要

An ion-beam exposure can be applied to form defects in supported graphene which can be tuned with energies and fluence. However, recent results show that nuclear energy loss process is the dominant mechanism in defect formation. In the present work, it is shown that in low energy regime (1-10 keV Ar+ ions), both nuclear and electronic energy losses play an important role in forming different types of defects. Here we show a linear relation between defect induction efficiency and energy loss. Conductive atomic force microscopy shows a significant reduction in the current through supported graphene after ion beam exposure. (C) 2019 Elsevier B.V. All rights reserved.