▎ 摘　　要

An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of -1.0 V and an ON/OFF-state current ratio of more than 10(3). Both ON and OFF state are stable under a constant voltage stress and survive up to 10(8) read cycles at a read voltage of -1.0 V.