• 文献标题:   DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor
  • 文献类型:   Article
  • 作  者:   SHOHANY BG, ROKNABADI MR, KOMPANY A
  • 作者关键词:   graphdiyne, graphene, heterojunction, resonant tunneling transistor, dftnegf
  • 出版物名称:   COMPUTATIONAL MATERIALS SCIENCE
  • ISSN:   0927-0256 EI 1879-0801
  • 通讯作者地址:   Ferdowsi Univ Mashhad
  • 被引频次:   4
  • DOI:   10.1016/j.commatsci.2017.12.031
  • 出版年:   2018

▎ 摘  要

The chemical stability of graphene and graphdiyne means that they can be stacked in different combinations to produce a new nanotransistor for ultra-high frequency applications. Here we report a resonant tunneling transistor through a graphene-graphdiyne-graphene heterojunctions sandwiched between two graphene electrodes. The characteristics of this transistor, which were modeled on the basis of density functional theory, revealed that the current is dominated by tunneling transitions. (C) 2017 Elsevier B.V. All rights reserved.